Denton多靶磁控溅射镀膜系统

（Denton Multi-target Magnetic Control Sputtering System）

主要技术指标/Specifications:

  1. 极限真空：优于5´10-7Torr

Ultimate vacuum: better than 5´10-7Torr

  1. 镀膜均匀性与重复性：6英寸衬底均匀性优于±3 % ，重复性优于±2.0%

Uniformity & Repeatability: Thickness non-uniformity less than ±5% on 6″ wafer; repeatability better than ±2%

  1. 靶材：3个3英寸靶位；2个DC源和1个RF源

Target: three 3” target; two DC power and one RF power

  1. 基片尺寸：支持6英寸以下兼顾5、4、3、2英寸以及破片

Substrate size:  6″, 5”, 4”, 3” and below; pieces.

  1. 具备防交叉污染的挡板。

Independent, electro-pneumatic cathode shutters to avoid cross contamination

  1. 可做多层薄膜溅射、多靶共溅射、反应溅射等

Capability of multilayer film deposition, co-sputtering and reactive sputtering

主要用途/Applications:

  溅射沉积Au, Ni, Al, Ge, Ti, Pt、Ta、SiO2、Mo、W、ITO等及相关复合膜。

  Sputtering deposit Au, Ni, Al, Ge, Ti, Pt、Ta、SiO2、Mo、W、ITO and related composite films.

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