VistecEBPG-5200+电子束光刻系统

（Vistec EBPG-5200+Electron-beam lithography system）

主要技术指标/Specifications:

  1. 最大加速电压：100KV

Accelerating voltage: 100KV

  1. 最大扫描速度：50MHZ

Pattern generator frequency: 50MHz

  1. 束流：0.1nA~100nA

Beam current：0.1nA~100nA

  1. 最小束斑直径：≤3nm

Minimum beam spot size: ≤3nm

  1. 电子束寻址位DAC: 20bits主场，14bits子场

DAC addressing: 20bits main field, 14bits sub field

  1. 最小实测线宽：≤8nm

Minimum measured line width：≤8nm

  1. 最小重合/拼接精度：±12 nm

Minimum stitching/overlay accuracy: ±12 nm

  1. 最大写场：1mm*1mm

Write filed: 1mm*1mm

  1. 基片尺寸：支持8英寸基片及6英寸掩膜版，同时兼容3、4、5、6英寸硅片与4、5、6、7英寸掩膜版、以及破片的电子束加工，最大基片厚度0.675mm。

Substrate size: 2”,3”,4”,5”, 6”,8”, and pieces with max thickness 0.675 mm for wafers. Full range of multi piece part holders for different of material Mask Holder:  3”,4”,5”, 6”, 7”   (max. thickness: 0.09” for 5” mask holder, 0.25” for 6” mask holder)

主要用途/Application:

微纳器件加工中曝光纳米级结构图型，可用于各种纳米结构及器件、光刻掩膜版以及纳米压印模板等的加工.

Electron beam direct writing of nanometer-scale pattern or nano-devices. Application on fabrication of various nano-structure, devices, photo mask and nano-imprint template with high write speed and large write field.

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