离子束溅射系统

(Ion Beam Sputtering System, IBD)

主要技术指标/Specifications：

  1. 极限真空：2´10-4 Pa

Ultimate vacuum: better than 2´10-4 Pa.

  1. 镀膜均匀性与重复性：3英寸衬底均匀性优于±5% ，重复性优于±5%

Thickness non-uniformity: better than ±5 % on 3” substrate.

Thickness repeatability: better than ±5%

  1. 4个靶位（4inch），2套离子源，可做反应溅射

Four 4” targets and two ion sources with capability of reactive sputtering

  1. 基片尺寸：支持3英寸厚度在4毫米以下基片

3” substrate with less than 4mm thickness.

主要用途（应用范围）：

        溅射沉积Ti、Cr、Ni、Cu、Ag、FeNi、TiNi、Ge、SiC、SiO2、Al2O3、Si3N4等单层或多层薄膜

        Sputtering deposition of monolayer or multilayer metal/ dielectric film, such as Ti,Cr,Ni,Cu,Ag,FeNi,TiNi,Ge,Si,C,SiO2,Al2O3,Si3N4, and so on.

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