LH-Z550溅射系统

(LH-Z550 Sputtering System)

主要技术指标/Specifications：

  1. 极限真空：6´10-4 Pa

    Ultimate vacuum: better than 6´10-4 Pa.

  1. 沉积速率：数百A/min

    镀膜均匀性与重复性：3英寸衬底均匀性优于±10% ，重复性优于±10%；

    Deposition rate: few hundreds A/min

    Thickness non-uniformity: better than 10 % on 3” substrate.

    Thickness repeatability: better than ±10%

  1. 靶材尺寸：6英寸靶材；1个RF靶（Cr), 2个DC靶位(Cu、Au、Pt) (1KW)

    Target size: 6” ; one RF power on Cr target and two DC power for Cu, Au and Pt     targets.

  1. 基片尺寸: 4英寸、3英寸及以下尺寸基片

    Substrate size: 4” or 3” and below

设备特点/Features：

        基座面积大：1次需加工3寸13片基片。

        Sputtering 13 pieces of 3” wafer at one time due to its large substrate stage.

主要用途/Applications：

        溅射沉积Cr/Cu种子层、Au、Pt薄膜(200-300nm）

        Sputtering deposition Cr/Cu seed laer, Au or Pt film with 200-300nm thickness.

equipwn_bmcj_LHZ550