Ulvac超高真空溅射系统

(Ulvac Ultra-high Vacuum Sputtering System)

主要技术指标/Specifications：

  1. 极限真空：优于1×10-6 Pa.

Ultimate vacuum: better than 6.7×10-7 Pa.

  1. 膜厚: 几nm～100nm

溅射速率：2-4nm/min

薄膜均匀性与重复性：3英寸衬底均匀性优于±2 % ，重复性优于±2%

Film thickness: few nm~100nm

Sputtering rate: 2~4nm/min

Thickness non-uniformity: better than ±2 % on 3” substrate.

Thickness repeatability: better than ±2%

  1. 靶材尺寸：2英寸；5个靶位；1RF源，2DC源

Target size: 2”；5 targets；one RF power and two DC powers

  1. 基片尺寸：3英寸基片与破片

Substrate size: 3” and below; pieces.

设备特点/Features：

  1. 可做超薄薄膜

Capability of nanometer-scale ultra-thin film

  1. 可做多层薄膜（有五个靶源）

Capability of multi-layer film stacks using 5 targets.

主要用途/Applications：

        溅射沉积Pd、Ti、Zr、Ta、Al、Cu、W、 NiFe、FeMn,、CoFeS等各种纳米级单层或多层纳米厚度膜（通常低于50nm)。

        Sputtering deposition of.nanometer-scale metal monolayer or multilayer film (e.g., Pd,Ti,Zr,Ta,Al,Cu,W, NiFe,FeMn, ,CoFeS , etc.)

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