Denton多靶磁控溅射镀膜系统
(Denton Multi-target Magnetic Control Sputtering System)
主要技术指标/Specifications:
- 极限真空:优于5´10-7Torr
Ultimate vacuum: better than 5´10-7Torr
- 镀膜均匀性与重复性:6英寸衬底均匀性优于±3 % ,重复性优于±2.0%
Uniformity & Repeatability: Thickness non-uniformity less than ±5% on 6″ wafer; repeatability better than ±2%
- 靶材:3个3英寸靶位;2个DC源和1个RF源
Target: three 3” target; two DC power and one RF power
- 基片尺寸:支持6英寸以下兼顾5、4、3、2英寸以及破片
Substrate size: 6″, 5”, 4”, 3” and below; pieces.
- 具备防交叉污染的挡板。
Independent, electro-pneumatic cathode shutters to avoid cross contamination
- 可做多层薄膜溅射、多靶共溅射、反应溅射等
Capability of multilayer film deposition, co-sputtering and reactive sputtering
主要用途/Applications:
溅射沉积Au, Ni, Al, Ge, Ti, Pt、Ta、SiO2、Mo、W、ITO等及相关复合膜。
Sputtering deposit Au, Ni, Al, Ge, Ti, Pt、Ta、SiO2、Mo、W、ITO and related composite films.