This system is designed for rapid thermal annealing (RTA) of samples, with a temperature range of 300–1100 °C. It can be used for post-ion implantation activation, as well as thermal annealing and defect repair processes for various materials.

The system is equipped with a vacuum pump, enabling chamber evacuation to create a vacuum environment, which effectively prevents sample oxidation during processing.

Process/Testing Capabilities

Capable of rapid thermal annealing for 6-inch wafers and smaller samples. The process temperature range is 300–1100 °C, with programmable control of temperature profiles and setpoints.

The system is equipped with four process gas lines: N₂, Ar, O₂, and NH₃.

Technical Specifications

The system features two temperature control modes: thermocouple-based control for low-temperature operation (< 800 °C) and infrared pyrometer control for high-temperature operation (≥ 800 °C).Ramp rate: 10 °C/s.Temperature control accuracy: ≤ 1%