This system is designed for rapid thermal annealing (RTA) of samples, with a temperature range of 300–1100 °C. It can be used for post-ion implantation activation, as well as thermal annealing and defect repair processes for various materials.

An inert gas atmosphere is employed to effectively prevent sample oxidation during processing.

Process/Testing Capabilities

Capable of rapid thermal annealing for 6-inch wafers and smaller samples. The process temperature range is 300–1100 °C, with programmable temperature profiles and user-defined temperature zones.The system is equipped with two inert process gas lines, N₂ and Ar.

Technical Specifications

The system features two temperature control modes: thermocouple-based control for low-temperature operation (< 800 °C) and infrared pyrometer control for high-temperature operation (≥ 800 °C).Ramp rate: 10 °C/s.Temperature control accuracy: ≤ 1%