SUSS MA6双面对准光刻机
SUSS MA6双面对准光刻机 (SUSS MA6 Mask Aligner) 主要技术指标/Specifications: 紫外光波长:350nm~450nm Exposure wavelength:350nm~450nm 光强均匀性:2% (6英寸的衬底) Light intensity uniformity:2% (6inch wafer) 分辨率: 0.8μm Resolution: 0.8μm 正面套准精度:0.5μm Top side overlay accuracy: 0.5μm 背面套准精度:1μm Back side overlay accuracy:1μm 基片尺寸:支持6英寸以下5、4、3以及破片 Substrate size: 3”, 4”, 5”, 6”, and piece parts. 主要用途/Applications: 微纳器件加工中曝光微米级结构图型。 Patterning of micrometer-scale structures with photoresist.