Beneq热型/等离子增强型原子层沉积设备
(Beneq Thermal/Plasma Enhanced Atomic Layer Deposition)
主要用途/ Application:
具备热ALD和PE-ALD两种工作模式,即采用加热或等离子辅助增强模式,可沉积多种超薄、高保形性、高台阶覆盖能力的高质量介质薄膜,包括金属氧化物和金属氮化物,厚度可实现原子层的控制(1 atom-layer/cycle)。
该设备可沉积薄膜包括:氧化铝(Al2O3),氮化铝(AlN),氧化硅(SiO2),氮化硅(Si3N4),氧化铪(HfO2),氮化铪(Hf3N4),氧化钛(TiO2),氧化钽(Ta2O5),氮化钽(TaNx)。
上述薄膜典型应用举例:高介电绝缘栅、钝化层、保护层、金属阻挡层(势垒层)等。
Two modes of thermal-ALD and PE-ALD can be applied, i.e., through heating or plasma enhanced (PE), our equipment can deposit a variety of ultra-thin, high shape-preserving and step-covering dielectric thin films, such as metal oxides. Thickness can be accurately controlled by atom level (1 atom layer/cycle).
Depositable films include: Alumina (Al2O3), aluminum nitride (AlN), silicon oxide (SiO2), silicon nitride (Si3N4), hafnium oxide (HfO2), hafnium nitride (Hf3N4), titanium oxide (titanium dioxide), tantalum oxide (Ta2O5), tantalum nitride (TaNx).
设备工作原理简介/ Operating principle:
常规原子层沉积是通过将气相前驱体脉冲交替地通入反应器并在沉积基片上自限制式化学吸附并在一定温度下反应而形成单原子层沉积膜的一种方法。不断重复这种自限制反应就形成所需要厚度的薄膜。在膜层的均匀性、保形性、阶梯覆盖率以及厚度控制等方面都具有明显的优势。等离子体增强原子层沉积(PE-ALD)是对ALD技术的扩展,通过等离子体的引入,产生大量活性自由基,增强了前驱体物质的反应活性,从而拓展了ALD对前驱源的选择范围和应用要求,缩短了反应周期的时间,同时也降低了对样品沉积温度的要求,可以实现低温甚至常温沉积,特别适合于对温度敏感材料和柔性材料上的薄膜沉积。另外,等离子体的引入可以进一步的去除薄膜中的杂质,可以获得更低的电阻率和更高的薄膜致密度等。此外,等离子体还可以对反应腔室进行清洗以及对基片进行表面活化处理等。
Atomic layer deposition is a method of forming deposition film by pulsing gas precursors alternately into the reactor and chemisorbing and reacting on the deposited substrate. The surface reaction of atomic layer deposition is self-limiting. In fact, this self-limiting characteristic is the basis of atomic layer deposition technology. Repetition of this self-limiting reaction leads to the formation of the desired film. It has obvious advantages in film uniformity, step coverage and thickness control. Plasma-enhanced atomic layer deposition is an extension of ALD technology. By introducing plasma, a large number of active free radicals are generated, which enhances the reactivity of precursor materials. This enlarges the selection range and application requirements of precursor sources for ALD, shortens the reaction period, and reduces the requirement of sample deposition temperature, so that low-temperature or even room-temperature deposition can be realized. It is especially suitable for thin film deposition on temperature sensitive materials and flexible materials. In addition, the introduction of plasma can further remove the impurities in the film, and obtain lower resistivity and higher film density. In addition, plasma can also clean the reaction chamber and activate the substrate surface.
工艺能力/ capability:
- 可以加工的衬底尺寸:8 英寸、6英寸、4英寸、3英寸以及破片
- 镀膜均匀性:8英寸衬底均匀性优于±1%(热法), ±2%(等离子体增强法)
- 工艺温度及温度控制精度:室温〜500°C,沉积温度控制精度±1°C,反应腔温度的控制精度在±2°C
- 传送模式:自动Loadlock传送系统
- Substrate stage able to hold maximum one 8″ wafer
- Uniformity: Thickness non-uniformity less than ±1%(thermal ALD),±2%(PEALD) on 8″ wafer
- Process temperature: top to 500℃,deposition temperature precision ±1°C,reaction chamber temperature precision ±2°C
- Wafer transfer: Automatic loadlock transfer system
典型使用案例/ Typical scenario:
ALD可实现绝缘栅介质(高介电常数)、钝化层介质、保护层介质、金属阻挡层介质等多种材料原位生长, 可实现高度保形性镀膜:
ALD can realize in-situ growth of semiconductors, insulating gate dielectrics,metal barrier and various materials, can realize highly conformal coating::
(以上SEM照片均来源于ALD技术的近期公开发表的文献资料,作为本ALD设备的应用举例。)
(The above SEM photos are taken from recent published literature on ALD technology,as an example of application.)
设备类别/Facilities::薄膜沉积设备/Thin Film Deposition Equipment;
设备编号/No.:WF1BALD01;
设备地点/Location:西区薄膜I区。
工艺工程师/Engineer in response:
姓名:乌李瑛;邮箱:lynn_wu@sjtu.edu.cn;电话:021-34207734-8020
Name: Liying Wu;Email:lynn_wu@sjtu.edu.cn; Tel: 021-34207734-8020.