离子束溅射系统
(Ion Beam Sputtering System, IBD)
主要技术指标/Specifications:
- 极限真空:2´10-4 Pa
Ultimate vacuum: better than 2´10-4 Pa.
- 镀膜均匀性与重复性:4英寸衬底均匀性优于±5% ,重复性优于±5%
Thickness non-uniformity: better than ±5 % on 4” substrate.
Thickness repeatability: better than ±5%
- 2个靶位(4inch),2套离子源
Four 2” targets and two ion sources.
- 基片尺寸:支持4英寸厚度在4毫米以下基片
4” substrate with less than 4mm thickness.
主要用途(应用范围):
溅射沉积Ti、Cr、Ni、Cu、Au等单层或多层薄膜;可做离子束溅射清洗(IBC),离子束溅射沉积(IBSD)。
Ion beam sputtering deposition (IBSD) of monolayer or multilayer metal/ dielectric film, such as Ti,Cr,Ni,Cu,Au, etc, with capability of ion beam cleaning (IBC) and reactive sputtering.