电子束蒸发系统
(E-Beam Evaporator)
主要技术指标/Specifications:
- 极限真空度:£5´10-4 Pa
Ultimate Vacuum: £5´10-4 Pa
- 薄膜均匀性:£± 3% (以4英寸基片为准,镀膜厚度在200nm时)
Film non-uniformity: £± 3% @ 200nm film on 4” wafer
- 蒸发速率: 20A/sec
Evaporation rate: 20A/sec
- 电子枪:2只;8个坩埚
Two E-guns; eight crucibles
- 基片加热: 烘烤温度³350℃
Substrate heating: baking temperature ³350℃
- 基片尺寸:平板工作盘直径160mm
Substrate stage size: 160mm
主要用途/Applications:
蒸发铝、铜、金、银、钼、钽、钛、铬等金属或合金薄膜
Evaporating metal film such as Al, Cu, Au, Ag, Mo, Ta, Ti, Cr, etc.