晶圆表面颗粒缺陷检测仪
(Optical Surface Analyzer)
主要用途/ Application:
该设备是针对半导体和和化合物半导体行业的半自动晶圆表面缺陷的检查分析仪器。该设备利用激光扫描样品的整个表面,通过4个频道(散射光频道、反射光频道、相移频道及Z频道)的探测器所收集到的信号,快速将缺陷(包括微粒、划伤、坑点、水渍、痕迹残留等)进行分类,统计每一种缺陷的数量并且量测出相应的缺陷尺寸,最后给出整个表面的缺陷分布图以及检测报告。
This equipment is a semi-automatic wafer surface defect inspection and analysis instrument for the semiconductor and compound semiconductor industries. This device uses laser scanning to scan the entire surface of the sample, and collects signals from detectors in four channels (scattered light channel, reflected light channel, phase shift channel, and Z channel) to quickly classify defects (including particles, scratches, pits, water stains, residual traces, etc.), count the number of each defect, measure the corresponding defect size, and finally provide a defect distribution map and detection report for the entire surface.
设备工作原理简介/ Operating principle:
晶圆表面缺陷检测技术通过收集晶圆表面散射光信号来判断表面“非正常”区域。入射光照射到理想晶圆表面时发生镜面反射,当光束入射到尘埃颗粒或划痕等“非正常”区域时,即发生散射。散射光的强度、方向、相位等信息与缺陷尺寸、形状、成分密切相关。
The wafer surface defect detection technology identifies “abnormal” areas on the surface by collecting scattered light signals from the wafer surface. When the incident light is irradiated onto the ideal wafer surface, it undergoes specular reflection. When the beam is incident on “abnormal” areas such as dust particles or scratches, scattering occurs. The intensity, direction, phase, and other information of scattered light are closely related to the size, shape, and composition of defects.
工艺能力/ Capability:
对各种缺陷的灵敏度指标为(最小探测尺寸):
微粒:直径≥83nm (PSL on Si)
划伤:长≥100um,宽≥0.1um,深≥5nm
坑点:直径≥20um,深≥5nm
污物(液体残留):直径≥20um,厚度≥1nm
The sensitivity index for various defects is (minimum detection size):
Particles: diameter ≥ 83nm (PSL on Si)
Scratches: length ≥ 100um, width ≥ 0.1um, depth ≥ 5nm
Pit point: diameter ≥ 20um, depth ≥ 5nm
Dirt (liquid residue): diameter ≥ 20um, thickness ≥ 1nm
技术指标/ Specifications:
405nm波长,激光斑点直径≤15微米
最大样品尺寸:6英寸、
405nm wavelength, laser spot diameter ≤ 15 microns
Maximum sample size: 6 inch
设备类别/Facilities:测试设备/ Characterization
设备编号/No.:EFM4OSA01
设备地点/Location:东区薄膜 Ⅳ区/ East Thin Film IV Area
工艺工程师/Engineer in response:
姓名:瞿敏妮;邮箱:minni.qu@sjtu.edu.cn;电话:021- 34207734-8003
Name: Minni Qu;Email:minni.qu@sjtu.edu.cn; Tel: 021- 34207734-8003.
设备照片/Photos: