激光诱导深度刻蚀

（Laser Induced Deep Etching System）

主要用途/ Application：

LIDE以激光直写的方式对玻璃进行选择性激光改性，无需光刻，也无需在物理层面去除玻璃材料。对改性后的玻璃进行各向同性的湿法蚀刻工艺，经过激光改性区域的玻璃材料的蚀刻速度远远快于未经加工的区域。这种方式加工可在玻璃上进行高精度，无缺陷的微结构加工。LIDE可以用于玻璃通孔、玻璃盲孔、玻璃腔体的制造。LIDE可制作的最小孔径深孔比一般为1：10或更小，在某些条件下最高可至1：50。

LIDE performs selective laser modification of glass by direct laser writing without physically removing the glass material. The modified glass is subjected to a following isotropic wet etching process, where the glass material in the laser-modified area is etched much faster than in the unprocessed area. This approach allows for high-precision, defect-free microstructuring of glass. LIDE can be used to fabricate through-holes, blind holes, and cavities in glass. The smallest aspect ratios fabricated with LIDE are typically 1:10 or less, and up to 1:50 under certain conditions.

 

设备工作原理简介/ Operating principle：

激光诱导深度刻蚀是一种利用激光诱导对玻璃局部改性的工艺。先根据设计图形对加工玻璃进行选择性激光改性，改性区域的被蚀刻速度远远高于未被改性过的材料。后通过湿法刻蚀的方式产生设计需求的结构尺寸。

Laser-induced depth etching is a process that utilizes laser-induced local modification of glass. The processed glass is first selectively laser modified according to the design pattern, and the modified areas are etched at a much higher rate than the unmodified material. The structural dimensions required by the design are then produced by wet etching.

 

工艺能力/ Capability：

1. 10微米以上孔径；
2. 最大500微米深度通孔；
3. 通常深宽比1:10，最大1：50深宽比。
4. 锥度在7°-8°之间。

 

1. minimum via diameter 10 µm；
2. Maximum depth of TGV 500um;
3. Typically, the aspect ratio is in the range of 1:10 but depending on glass type it can also be as high as 1:50.
4. The taper angle is between 0.7° -8°

 

技术指标/ Specifications：

1. 工晶圆尺寸：100mm、150mm、200mm、300mm、450mm
2. 基板尺寸：小于510 x 510 mm²
3. 晶圆厚度：小于500um。

 

1. wafer sizes: 100 mm,150 mm, 200 mm, 300 mm, 450 mm
2. Panel formats: smaller than 510 x 510 mm²
3. Glass thickness: ≤5mm
4. Don’t accept fragments and irregular pieces

 

典型使用案例/ Typical scenario：

TGV工艺：

1) 绘制图形，激光诱导,

2) 湿法刻蚀，形成通孔。

TGV process:

1) Drawing graphics, laser-induced,

2) Wet etching to form TGV.

 

设备类别/Facilities：光刻/图形化设备/ Lithography/Patterning Equipment

设备编号/No.：ECS0LED01

设备地点/Location：东区化合物半导体区/ East Compound Semiconductor Area

 

工艺工程师/Engineer in response:

姓名：田苗；邮箱：miaotian@sjtu.edu.cn；电话：021- 34206126-6031

Name: Miao Tian；Email：miaotian@sjtu.edu.cn; Tel: 021- 34206126-6031

 

设备照片/Photos：