深紫外步进光刻机

（DUV Stepper）

主要用途/ Application：

0.18 um工艺节点光刻

Photolithography at 0.18 um node

 

设备工作原理简介/ Operating principle：

DUV stepper采用 248nm 准分子激光作为光源，工艺节点在 180nm 水平，采用了步进扫描投影式光刻，光源通过掩模， 经光学镜头调整和补偿后，以步进重复的方式在硅片上实现曝光，精度高且曝光速度极快。

The DUV stepper utilizes 248nm excimer laser as the light source, have a resolution of 180nm. It employs step-and-scan projection lithography, in which the light source passes through a mask, and then, after being adjusted and compensated for by an optical lens, the exposure is realized on the wafer in a step-and-repeat manner, with high precision and extremely fast exposure speeds.

 

工艺能力/ Capability：

1. 3/4/6/8 inch wafer 兼容
2. WPH: 120~130 片wafer。
3. 曝光光源: 248nm KrF
4. 加工晶圆尺寸: 3/4/6/8 inch
5. 最大曝光面积: ≥22 mm × 22 mm
6. 极限分辨率: ≤150 nm
7. 自动对焦精度: 3σ≤ 80 nm
8. 像场内偏差: Range≤150 nm @NA0.65, σ75
9. 对准精度SMO: 3σ≤ 25 nm
10. 照明光强: ≥20000 W/m2@NA0.65, σ75
11. 照明均一性: ≤0%@NA0.65, σ0.75
12. ≤3%@NA0.65, σ0.4
13. 镜头缩放比例: ≤5：1

 

1. 3/4/6/8 inch wafer compatible.
2. WPH: 120~130 pcs/hrs.
3. wavelength: 248nm KrF
4. Wafer size: 3/4/6/8 inch
5. Max shot size: ≥22 mm × 22 mm
6. Best resolution: ≤150 nm
7. AF accuracy: 3σ≤ 80 nm
8. Field distortion: Range≤150 nm @NA0.65, σ75
9. Overlay SMO: 3σ≤ 25 nm
10. intensity: ≥20000 W/m2@NA0.65, σ75
11. Illumination uniformity: ≤0%@NA0.65, σ0.75
12. ≤3%@NA0.65, σ0.4
13. Reduce ratio: ≤5：1

 

设备类别/Facilities：光刻/图形化设备/ Lithography/Patterning Equipment

设备编号/No.：ELT2DUV01

设备地点/Location：东区光刻Ⅱ区(Canon)/ East Lithography Area II (Canon)

 

工艺工程师/Engineer in response:

姓名：徐剑；邮箱：xu.jian@sjtu.edu.cn；电话：021- 34206126-6018

Name: Jian Xu；Email：xu.jian@sjtu.edu.cn; Tel: 021- 34206126-6018.

 

设备照片/Photos：