全自动多靶溅镀系统
(Automatic Muti-targets Sputtering System)
主要技术指标/Specifications:
- 极限真空度:1´10-4 Pa
Ultimate vacuum: 1´10-4 Pa
- 氧化物薄膜沉积速率大于 10nm/min
Sputter rate of oxide film: more than 10nm/min
- 均一性小于 ±5%
Film non-uniformity: less than ±5%
- 靶材:3英寸,4个靶位,1个DC源和1个RF源
Target: 3”, Four target; one DC power and one RF power
- 基片加热:250℃
Substrate heating: 250℃
- 基片尺寸:3英寸及以下
Substrate size: 3” and below
主要用途/Application:
仅限于使用硅片和玻璃基板,样品表面不允许有污染性的材料(如光刻胶等有机材料);设备仅限于沉积如下氧化物半导体与绝缘体薄膜:SiOx, AlOx, TiOx, YOx, TaOx, MoOx, IGZO, ZnO, ITO和IZMeO。
Only used for silicon and glass substrates; contamination materials (e.g. Photoresist) are forbidden. Only sputtering deposit SiOx, AlOx, TiOx, YOx, TaOx, MoOx, IGZO, ZnO, ITO和IZMeO film.